Metal source/drain technology for nanoscale MOSFET & high speed flash applications

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dc.contributor.authorChoi, Yang-Kyu-
dc.contributor.authorJang, Moongyu-
dc.contributor.authorJun, Myungsim-
dc.contributor.authorChoi, Seongjin-
dc.date.accessioned2013-03-28T14:22:14Z-
dc.date.available2013-03-28T14:22:14Z-
dc.date.created2012-02-06-
dc.date.issued2010-02-03-
dc.identifier.citationSemicon Korea 2010, v., no., pp. --
dc.identifier.urihttp://hdl.handle.net/10203/166454-
dc.languageENG-
dc.publisherSemicon Korea 2010-
dc.titleMetal source/drain technology for nanoscale MOSFET & high speed flash applications-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.publicationnameSemicon Korea 2010-
dc.identifier.conferencecountrySouth Korea-
dc.identifier.conferencecountrySouth Korea-
dc.contributor.localauthorChoi, Yang-Kyu-
dc.contributor.nonIdAuthorJang, Moongyu-
dc.contributor.nonIdAuthorJun, Myungsim-
dc.contributor.nonIdAuthorChoi, Seongjin-
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EE-Conference Papers(학술회의논문)
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