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College of Natural Sciences(자연과학대학)Dept. of Physics(물리학과)PH-Conference Papers(학술회의논문)

Ab initio study of boron segregation and deactivation at Si/SiO2 interface

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dc.contributor.authorOh, Y. J.-
dc.contributor.authorHwang, J.-H.-
dc.contributor.authorNoh, H.-K.-
dc.contributor.authorBang, J.-
dc.contributor.authorRyu, B.-
dc.contributor.authorChang, Kee-Joo-
dc.date.accessioned2013-03-28T13:53:06Z-
dc.date.available2013-03-28T13:53:06Z-
dc.date.created2012-02-06-
dc.date.issued2010-08-
dc.identifier.citationInternational Union of Materials Research Societies - International Conference on Electronic Materials 2010, v., no., pp. --
dc.identifier.urihttp://hdl.handle.net/10203/166284-
dc.languageENG-
dc.titleAb initio study of boron segregation and deactivation at Si/SiO2 interface-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.publicationnameInternational Union of Materials Research Societies - International Conference on Electronic Materials 2010-
dc.identifier.conferencecountrySouth Korea-
dc.identifier.conferencecountrySouth Korea-
dc.contributor.localauthorChang, Kee-Joo-
dc.contributor.nonIdAuthorOh, Y. J.-
dc.contributor.nonIdAuthorHwang, J.-H.-
dc.contributor.nonIdAuthorNoh, H.-K.-
dc.contributor.nonIdAuthorBang, J.-
dc.contributor.nonIdAuthorRyu, B.-
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PH-Conference Papers(학술회의논문)
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