DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Y. | - |
dc.contributor.author | Kong, K.-J. | - |
dc.contributor.author | Chang, H. | - |
dc.contributor.author | Shin, Mincheol | - |
dc.date.accessioned | 2013-03-28T11:42:26Z | - |
dc.date.available | 2013-03-28T11:42:26Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2010-06-13 | - |
dc.identifier.citation | 2010 15th Silicon Nanoelectronics Workshop, SNW 2010, v., no., pp. - | - |
dc.identifier.uri | http://hdl.handle.net/10203/165403 | - |
dc.language | ENG | - |
dc.publisher | 2010 15th Silicon Nanoelectronics Workshop, SNW 2010 | - |
dc.title | Device characteristics of double-gate MOSFETs with Si-Dielectric interface model from first principle calculations | - |
dc.type | Conference | - |
dc.identifier.scopusid | 2-s2.0-77958000323 | - |
dc.type.rims | CONF | - |
dc.citation.publicationname | 2010 15th Silicon Nanoelectronics Workshop, SNW 2010 | - |
dc.identifier.conferencecountry | United States | - |
dc.contributor.localauthor | Shin, Mincheol | - |
dc.contributor.nonIdAuthor | Park, Y. | - |
dc.contributor.nonIdAuthor | Kong, K.-J. | - |
dc.contributor.nonIdAuthor | Chang, H. | - |
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