A through-silicon-via to active device noise coupling study for CMOS SOI technology
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Duan, X. | ko |
| dc.contributor.author | Gu, X. | ko |
| dc.contributor.author | Cho, J. | ko |
| dc.contributor.author | Kim, Joungho | ko |
| dc.date.accessioned | 2013-03-28T10:43:02Z | - |
| dc.date.available | 2013-03-28T10:43:02Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2011-05-31 | - |
| dc.identifier.citation | 2011 61st Electronic Components and Technology Conference, ECTC 2011, pp.1791 - 1795 | - |
| dc.identifier.issn | 0569-5503 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/164971 | - |
| dc.language | English | - |
| dc.publisher | ECTC 2011 | - |
| dc.title | A through-silicon-via to active device noise coupling study for CMOS SOI technology | - |
| dc.type | Conference | - |
| dc.identifier.wosid | 000302341400274 | - |
| dc.identifier.scopusid | 2-s2.0-79960425453 | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 1791 | - |
| dc.citation.endingpage | 1795 | - |
| dc.citation.publicationname | 2011 61st Electronic Components and Technology Conference, ECTC 2011 | - |
| dc.identifier.conferencecountry | US | - |
| dc.identifier.conferencelocation | Lake Buena Vista, FL | - |
| dc.contributor.localauthor | Kim, Joungho | - |
| dc.contributor.nonIdAuthor | Duan, X. | - |
| dc.contributor.nonIdAuthor | Gu, X. | - |
| dc.contributor.nonIdAuthor | Cho, J. | - |
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