Lateral growth of GaAs over W by selective liquid phase epitaxy
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Chung, Ki-Woong | ko |
| dc.contributor.author | Kwon, Young Se | ko |
| dc.date.accessioned | 2007-10-05T02:31:07Z | - |
| dc.date.available | 2007-10-05T02:31:07Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 1988-05 | - |
| dc.identifier.citation | APPLIED PHYSICS LETTERS, v.52, no.20, pp.1716 - 1717 | - |
| dc.identifier.issn | 0003-6951 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/1646 | - |
| dc.language | English | - |
| dc.language.iso | en_US | en |
| dc.publisher | Amer Inst Physics | - |
| dc.title | Lateral growth of GaAs over W by selective liquid phase epitaxy | - |
| dc.type | Article | - |
| dc.identifier.wosid | A1988N391400023 | - |
| dc.identifier.scopusid | 2-s2.0-0004901352 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 52 | - |
| dc.citation.issue | 20 | - |
| dc.citation.beginningpage | 1716 | - |
| dc.citation.endingpage | 1717 | - |
| dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
| dc.identifier.doi | 10.1063/1.99026 | - |
| dc.embargo.liftdate | 9999-12-31 | - |
| dc.embargo.terms | 9999-12-31 | - |
| dc.contributor.localauthor | Kwon, Young Se | - |
| dc.contributor.nonIdAuthor | Chung, Ki-Woong | - |
| dc.type.journalArticle | Article | - |
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