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College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Conference Papers(학술회의논문)

A novel floating body cell memory with a laterally engineered bandgap using a Si-Si:C heterostructure

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dc.contributor.authorChoi, S.-J.ko
dc.contributor.authorMoon, D.-I.ko
dc.contributor.authorDing, Y.ko
dc.contributor.authorKong, E.Y.J.ko
dc.contributor.authorYeo, Y.-C.ko
dc.contributor.authorChoi, Yang-Kyuko
dc.date.accessioned2013-03-28T09:53:53Z-
dc.date.available2013-03-28T09:53:53Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2010-12-06-
dc.identifier.citation2010 IEEE International Electron Devices Meeting, IEDM 2010-
dc.identifier.issn0163-1918-
dc.identifier.urihttp://hdl.handle.net/10203/164689-
dc.languageEnglish-
dc.publisherIEDM-
dc.titleA novel floating body cell memory with a laterally engineered bandgap using a Si-Si:C heterostructure-
dc.typeConference-
dc.identifier.wosid000287997300137-
dc.identifier.scopusid2-s2.0-79951818296-
dc.type.rimsCONF-
dc.citation.publicationname2010 IEEE International Electron Devices Meeting, IEDM 2010-
dc.identifier.conferencecountryUS-
dc.identifier.conferencelocationSan Francisco, CA-
dc.contributor.localauthorChoi, Yang-Kyu-
dc.contributor.nonIdAuthorChoi, S.-J.-
dc.contributor.nonIdAuthorMoon, D.-I.-
dc.contributor.nonIdAuthorDing, Y.-
dc.contributor.nonIdAuthorKong, E.Y.J.-
dc.contributor.nonIdAuthorYeo, Y.-C.-
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EE-Conference Papers(학술회의논문)
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