DC Field | Value | Language |
---|---|---|
dc.contributor.author | Noh, H.-K. | - |
dc.contributor.author | Ryu, B. | - |
dc.contributor.author | Bang, J. | - |
dc.contributor.author | Chang, Kee-Joo | - |
dc.contributor.author | Choi, E.-A. | - |
dc.date.accessioned | 2013-03-28T09:43:03Z | - |
dc.date.available | 2013-03-28T09:43:03Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2010-07 | - |
dc.identifier.citation | 30th International Conference on the Physics of Semiconductors, v., no., pp. - | - |
dc.identifier.uri | http://hdl.handle.net/10203/164606 | - |
dc.language | ENG | - |
dc.title | The electronic structure of oxygen vacancy in amorphous HfSiO_4 | - |
dc.type | Conference | - |
dc.type.rims | CONF | - |
dc.citation.publicationname | 30th International Conference on the Physics of Semiconductors | - |
dc.identifier.conferencecountry | South Korea | - |
dc.identifier.conferencecountry | South Korea | - |
dc.contributor.localauthor | Chang, Kee-Joo | - |
dc.contributor.nonIdAuthor | Noh, H.-K. | - |
dc.contributor.nonIdAuthor | Ryu, B. | - |
dc.contributor.nonIdAuthor | Bang, J. | - |
dc.contributor.nonIdAuthor | Choi, E.-A. | - |
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