Effect of O-vacancy on the device instability of amorphous zinc-tin-oxide thin-film-transistors
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Ryu, B. | - |
| dc.contributor.author | Chang, Kee-Joo | - |
| dc.date.accessioned | 2013-03-28T09:31:51Z | - |
| dc.date.available | 2013-03-28T09:31:51Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2010-10-11 | - |
| dc.identifier.citation | 10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010, v., no., pp.664 - 665 | - |
| dc.identifier.issn | 1738-7558 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/164542 | - |
| dc.language | ENG | - |
| dc.title | Effect of O-vacancy on the device instability of amorphous zinc-tin-oxide thin-film-transistors | - |
| dc.type | Conference | - |
| dc.identifier.scopusid | 2-s2.0-79959967651 | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 664 | - |
| dc.citation.endingpage | 665 | - |
| dc.citation.publicationname | 10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010 | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.contributor.localauthor | Chang, Kee-Joo | - |
| dc.contributor.nonIdAuthor | Ryu, B. | - |
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