Electrical Transport Properties of Graphene Layer under Strain Probed by Atomic Force Microscopy

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dc.contributor.authorKwon, S.-
dc.contributor.authorChoi, S.-
dc.contributor.authorChung, H.J.-
dc.contributor.authorSeo, S.-
dc.contributor.authorPark, JeongYoung-
dc.date.accessioned2013-03-28T09:25:44Z-
dc.date.available2013-03-28T09:25:44Z-
dc.date.created2012-02-06-
dc.date.issued2011-05-27-
dc.identifier.citationALC 11(8th International Symposium on Atomic Level Characterizations for New Materials and Devices ’11), v., no., pp. --
dc.identifier.urihttp://hdl.handle.net/10203/164509-
dc.languageENG-
dc.titleElectrical Transport Properties of Graphene Layer under Strain Probed by Atomic Force Microscopy-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.publicationnameALC 11(8th International Symposium on Atomic Level Characterizations for New Materials and Devices ’11)-
dc.identifier.conferencecountrySouth Korea-
dc.identifier.conferencecountrySouth Korea-
dc.contributor.localauthorPark, JeongYoung-
dc.contributor.nonIdAuthorKwon, S.-
dc.contributor.nonIdAuthorChoi, S.-
dc.contributor.nonIdAuthorChung, H.J.-
dc.contributor.nonIdAuthorSeo, S.-
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EEW-Conference Papers(학술회의논문)
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