DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kwon, S. | - |
dc.contributor.author | Choi, S. | - |
dc.contributor.author | Chung, H.J. | - |
dc.contributor.author | Seo, S. | - |
dc.contributor.author | Park, JeongYoung | - |
dc.date.accessioned | 2013-03-28T09:25:44Z | - |
dc.date.available | 2013-03-28T09:25:44Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2011-05-27 | - |
dc.identifier.citation | ALC 11(8th International Symposium on Atomic Level Characterizations for New Materials and Devices ’11), v., no., pp. - | - |
dc.identifier.uri | http://hdl.handle.net/10203/164509 | - |
dc.language | ENG | - |
dc.title | Electrical Transport Properties of Graphene Layer under Strain Probed by Atomic Force Microscopy | - |
dc.type | Conference | - |
dc.type.rims | CONF | - |
dc.citation.publicationname | ALC 11(8th International Symposium on Atomic Level Characterizations for New Materials and Devices ’11) | - |
dc.identifier.conferencecountry | South Korea | - |
dc.identifier.conferencecountry | South Korea | - |
dc.contributor.localauthor | Park, JeongYoung | - |
dc.contributor.nonIdAuthor | Kwon, S. | - |
dc.contributor.nonIdAuthor | Choi, S. | - |
dc.contributor.nonIdAuthor | Chung, H.J. | - |
dc.contributor.nonIdAuthor | Seo, S. | - |
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