Effect of buffer layer on the fabrication and characteristics of ferroelectric thin film
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | No, Kwangsoo | - |
| dc.date.accessioned | 2013-03-27T10:51:37Z | - |
| dc.date.available | 2013-03-27T10:51:37Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2008 | - |
| dc.identifier.citation | MATERIALS RESEARCH SOCIETY SYMPOSIUM - PROCEEDINGS, v., no., pp. - | - |
| dc.identifier.issn | 1099-4742 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/161811 | - |
| dc.language | ENG | - |
| dc.publisher | INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | - |
| dc.title | Effect of buffer layer on the fabrication and characteristics of ferroelectric thin film | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | MATERIALS RESEARCH SOCIETY SYMPOSIUM - PROCEEDINGS | - |
| dc.identifier.conferencecountry | United States | - |
| dc.contributor.localauthor | No, Kwangsoo | - |
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