Bistability of dopant levels and doping efficiency in silicon nanowires
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Chang, Kee-Joo | - |
| dc.contributor.author | Moon, C.-Y. | - |
| dc.contributor.author | Lee, W.-J. | - |
| dc.contributor.author | Ryu, B. | - |
| dc.contributor.author | Park. J.-S. | - |
| dc.date.accessioned | 2013-03-27T07:27:51Z | - |
| dc.date.available | 2013-03-27T07:27:51Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2009-02 | - |
| dc.identifier.citation | 제16회 한국반도체학술대회 , v., no., pp. - | - |
| dc.identifier.uri | http://hdl.handle.net/10203/160396 | - |
| dc.language | ENG | - |
| dc.title | Bistability of dopant levels and doping efficiency in silicon nanowires | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | 제16회 한국반도체학술대회 | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.contributor.localauthor | Chang, Kee-Joo | - |
| dc.contributor.nonIdAuthor | Moon, C.-Y. | - |
| dc.contributor.nonIdAuthor | Lee, W.-J. | - |
| dc.contributor.nonIdAuthor | Ryu, B. | - |
| dc.contributor.nonIdAuthor | Park. J.-S. | - |
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