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Band Offset FinFET-Based URAM (Unified-RAM) Built on SiC for Multi-Functioning NVM and Capacitorless 1T-DRAM

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dc.contributor.authorChoi, Yang-Kyuko
dc.contributor.authorHan, JWko
dc.contributor.authorRyu, SWko
dc.contributor.authorKim, SHko
dc.contributor.authorChungjin Kimko
dc.contributor.authorKim, Cko
dc.contributor.authorAnn, JHko
dc.contributor.authorChoi, SJko
dc.contributor.authorChoi, KJko
dc.contributor.authorCho, BJko
dc.contributor.authorKim, JSko
dc.contributor.authorKim, KHko
dc.contributor.authorLee, GSko
dc.contributor.authorOh, JSko
dc.contributor.authorSong, MHko
dc.contributor.authorPark, YCko
dc.contributor.authorKim, JWko
dc.date.accessioned2013-03-27T06:25:54Z-
dc.date.available2013-03-27T06:25:54Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2008-06-
dc.identifier.citation28th IEEE Symposium on VLSI Technology, pp.200 - 201-
dc.identifier.urihttp://hdl.handle.net/10203/159955-
dc.languageEnglish-
dc.publisher123-
dc.titleBand Offset FinFET-Based URAM (Unified-RAM) Built on SiC for Multi-Functioning NVM and Capacitorless 1T-DRAM-
dc.typeConference-
dc.identifier.wosid000259442500077-
dc.type.rimsCONF-
dc.citation.beginningpage200-
dc.citation.endingpage201-
dc.citation.publicationname28th IEEE Symposium on VLSI Technology-
dc.identifier.conferencecountryUS-
dc.identifier.conferencelocationHawaii-
dc.contributor.localauthorChoi, Yang-Kyu-
dc.contributor.nonIdAuthorHan, JW-
dc.contributor.nonIdAuthorRyu, SW-
dc.contributor.nonIdAuthorKim, SH-
dc.contributor.nonIdAuthorChungjin Kim-
dc.contributor.nonIdAuthorKim, C-
dc.contributor.nonIdAuthorAnn, JH-
dc.contributor.nonIdAuthorChoi, SJ-
dc.contributor.nonIdAuthorChoi, KJ-
dc.contributor.nonIdAuthorCho, BJ-
dc.contributor.nonIdAuthorKim, JS-
dc.contributor.nonIdAuthorKim, KH-
dc.contributor.nonIdAuthorLee, GS-
dc.contributor.nonIdAuthorOh, JS-
dc.contributor.nonIdAuthorSong, MH-
dc.contributor.nonIdAuthorPark, YC-
dc.contributor.nonIdAuthorKim, JW-
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