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College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Conference Papers(학술회의논문)

High performance pMOSFETs using Si/SiGe/Si quantum wells with high-K/metal gate stacks and additive uniaxial strain for 22nm technology node

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dc.contributor.authorCho, Byung Jin-
dc.contributor.authorSuthram, S-
dc.contributor.authorMajhi, P-
dc.contributor.authorSun, G-
dc.contributor.authorKalra, P-
dc.contributor.authorHarris, HR-
dc.contributor.authorChoi, KJ-
dc.date.accessioned2013-03-27T05:52:59Z-
dc.date.available2013-03-27T05:52:59Z-
dc.date.created2012-02-06-
dc.date.issued2007-
dc.identifier.citationInternational Electron Devices Meeting, v., no., pp.727 - 730-
dc.identifier.urihttp://hdl.handle.net/10203/159718-
dc.languageENG-
dc.titleHigh performance pMOSFETs using Si/SiGe/Si quantum wells with high-K/metal gate stacks and additive uniaxial strain for 22nm technology node-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage727-
dc.citation.endingpage730-
dc.citation.publicationnameInternational Electron Devices Meeting-
dc.identifier.conferencecountryUnited States-
dc.identifier.conferencecountryUnited States-
dc.contributor.localauthorCho, Byung Jin-
dc.contributor.nonIdAuthorSuthram, S-
dc.contributor.nonIdAuthorMajhi, P-
dc.contributor.nonIdAuthorSun, G-
dc.contributor.nonIdAuthorKalra, P-
dc.contributor.nonIdAuthorHarris, HR-
dc.contributor.nonIdAuthorChoi, KJ-
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EE-Conference Papers(학술회의논문)
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