DC Field | Value | Language |
---|---|---|
dc.contributor.author | Cho, Byung Jin | - |
dc.contributor.author | Zang, H | - |
dc.contributor.author | Loh, WY | - |
dc.contributor.author | Oh, HJ | - |
dc.contributor.author | Choi, KJ | - |
dc.contributor.author | Nguyen, HS | - |
dc.contributor.author | Lo, GQ | - |
dc.date.accessioned | 2013-03-27T02:25:44Z | - |
dc.date.available | 2013-03-27T02:25:44Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2007-05-06 | - |
dc.identifier.citation | 211th Electrochemical Society Meeting, v., no., pp.0 - 0 | - |
dc.identifier.uri | http://hdl.handle.net/10203/158273 | - |
dc.language | ENG | - |
dc.title | Improved current drivability and gate stack integrity using buried SiC layer for strained Si/SiGe channel devices | - |
dc.title.alternative | Improved current drivability and gate stack integrity using buried SiC layer for strained Si/SiGe channel devices | - |
dc.type | Conference | - |
dc.type.rims | CONF | - |
dc.citation.beginningpage | 0 | - |
dc.citation.endingpage | 0 | - |
dc.citation.publicationname | 211th Electrochemical Society Meeting | - |
dc.identifier.conferencecountry | United States | - |
dc.identifier.conferencecountry | United States | - |
dc.contributor.localauthor | Cho, Byung Jin | - |
dc.contributor.nonIdAuthor | Zang, H | - |
dc.contributor.nonIdAuthor | Loh, WY | - |
dc.contributor.nonIdAuthor | Oh, HJ | - |
dc.contributor.nonIdAuthor | Choi, KJ | - |
dc.contributor.nonIdAuthor | Nguyen, HS | - |
dc.contributor.nonIdAuthor | Lo, GQ | - |
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