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College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Conference Papers(학술회의논문)

Novel ZrO2/Si3N4 Dual Charge Storage Layer to Form Step-Up Potential Wells for Highly Reliable Multi-Level Cell ApplicationNovel ZrO2/Si3N4 Dual Charge Storage Layer to Form Step-Up Potential Wells for Highly Reliable Multi-Level Cell Application

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dc.contributor.authorCho, Byung Jin-
dc.contributor.authorZhang, G-
dc.contributor.authorHwang, WS-
dc.contributor.authorBobade, SM-
dc.contributor.authorLee, SH-
dc.contributor.authorYoo, WJ-
dc.date.accessioned2013-03-27T02:24:56Z-
dc.date.available2013-03-27T02:24:56Z-
dc.date.created2012-02-06-
dc.date.issued2007-12-01-
dc.identifier.citationInternational Electron Device Meeting (IEDM) 2007, v., no., pp.0 - 0-
dc.identifier.urihttp://hdl.handle.net/10203/158269-
dc.languageENG-
dc.titleNovel ZrO2/Si3N4 Dual Charge Storage Layer to Form Step-Up Potential Wells for Highly Reliable Multi-Level Cell Application-
dc.title.alternativeNovel ZrO2/Si3N4 Dual Charge Storage Layer to Form Step-Up Potential Wells for Highly Reliable Multi-Level Cell Application-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage0-
dc.citation.endingpage0-
dc.citation.publicationnameInternational Electron Device Meeting (IEDM) 2007-
dc.identifier.conferencecountryUnited States-
dc.identifier.conferencecountryUnited States-
dc.contributor.localauthorCho, Byung Jin-
dc.contributor.nonIdAuthorZhang, G-
dc.contributor.nonIdAuthorHwang, WS-
dc.contributor.nonIdAuthorBobade, SM-
dc.contributor.nonIdAuthorLee, SH-
dc.contributor.nonIdAuthorYoo, WJ-
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EE-Conference Papers(학술회의논문)
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