DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ahn J.-H. | ko |
dc.contributor.author | Kim J.-Y. | ko |
dc.contributor.author | Kim J.-H. | ko |
dc.contributor.author | Roh J.-S. | ko |
dc.contributor.author | Kang S.-W. | ko |
dc.date.accessioned | 2013-03-27T01:56:24Z | - |
dc.date.available | 2013-03-27T01:56:24Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2008-10-13 | - |
dc.identifier.citation | Physics and Technology of High-k Gate Dielectrics 6 - 214th ECS Meeting, pp.335 - 339 | - |
dc.identifier.issn | 1938-5862 | - |
dc.identifier.uri | http://hdl.handle.net/10203/158069 | - |
dc.language | English | - |
dc.publisher | 123 | - |
dc.title | Dielectric properties of SrTiO3 thin films on SrRuO3 seed prepared by plasma-enhanced atomic layer deposition | - |
dc.type | Conference | - |
dc.identifier.wosid | 000272592200034 | - |
dc.identifier.scopusid | 2-s2.0-63149168096 | - |
dc.type.rims | CONF | - |
dc.citation.beginningpage | 335 | - |
dc.citation.endingpage | 339 | - |
dc.citation.publicationname | Physics and Technology of High-k Gate Dielectrics 6 - 214th ECS Meeting | - |
dc.identifier.conferencecountry | US | - |
dc.identifier.conferencelocation | Honolulu, HI | - |
dc.contributor.localauthor | Kang S.-W. | - |
dc.contributor.nonIdAuthor | Ahn J.-H. | - |
dc.contributor.nonIdAuthor | Kim J.-Y. | - |
dc.contributor.nonIdAuthor | Kim J.-H. | - |
dc.contributor.nonIdAuthor | Roh J.-S. | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.