Atomic layer deposition of copper thin film using Cu II(diketoiminate)2 and H2
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Han B. | - |
| dc.contributor.author | Parka K.-M. | - |
| dc.contributor.author | Park K. | - |
| dc.contributor.author | Park J.-W. | - |
| dc.contributor.author | Lee W.-J. | - |
| dc.date.accessioned | 2013-03-27T00:27:50Z | - |
| dc.date.available | 2013-03-27T00:27:50Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2009-06-01 | - |
| dc.identifier.citation | 2009 IEEE International Interconnect Technology Conference, IITC 2009, v., no., pp.173 - 174 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/157504 | - |
| dc.language | ENG | - |
| dc.title | Atomic layer deposition of copper thin film using Cu II(diketoiminate)2 and H2 | - |
| dc.type | Conference | - |
| dc.identifier.scopusid | 2-s2.0-70349446742 | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 173 | - |
| dc.citation.endingpage | 174 | - |
| dc.citation.publicationname | 2009 IEEE International Interconnect Technology Conference, IITC 2009 | - |
| dc.identifier.conferencecountry | Japan | - |
| dc.identifier.conferencecountry | Japan | - |
| dc.contributor.localauthor | Park K. | - |
| dc.contributor.nonIdAuthor | Han B. | - |
| dc.contributor.nonIdAuthor | Parka K.-M. | - |
| dc.contributor.nonIdAuthor | Park J.-W. | - |
| dc.contributor.nonIdAuthor | Lee W.-J. | - |
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