DC Field | Value | Language |
---|---|---|
dc.contributor.author | Zhang, L. | - |
dc.contributor.author | He, W. | - |
dc.contributor.author | Chan, D.S.H. | - |
dc.contributor.author | Cho, Byung Jin | - |
dc.date.accessioned | 2013-03-26T23:52:30Z | - |
dc.date.available | 2013-03-26T23:52:30Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2009-05-24 | - |
dc.identifier.citation | International Symposium on Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics - 215th Meeting of the Electrochemical Society, v.19, no., pp.615 - 623 | - |
dc.identifier.uri | http://hdl.handle.net/10203/157287 | - |
dc.language | ENG | - |
dc.title | Cubic structured HfLaO dielectrics for MIM capacitor for RF IC applications | - |
dc.type | Conference | - |
dc.identifier.scopusid | 2-s2.0-76549125666 | - |
dc.type.rims | CONF | - |
dc.citation.volume | 19 | - |
dc.citation.beginningpage | 615 | - |
dc.citation.endingpage | 623 | - |
dc.citation.publicationname | International Symposium on Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics - 215th Meeting of the Electrochemical Society | - |
dc.identifier.conferencecountry | United States | - |
dc.identifier.conferencecountry | United States | - |
dc.contributor.localauthor | Cho, Byung Jin | - |
dc.contributor.nonIdAuthor | Zhang, L. | - |
dc.contributor.nonIdAuthor | He, W. | - |
dc.contributor.nonIdAuthor | Chan, D.S.H. | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.