Quantum-well infrared phototransistor with pHEMT structure
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Oum, Joon Ho | ko |
| dc.contributor.author | Lee, Uk Hyun | ko |
| dc.contributor.author | Kang, Yong Hoon | ko |
| dc.contributor.author | Yang, Jong Ryul | ko |
| dc.contributor.author | Hong, Songcheol | ko |
| dc.date.accessioned | 2007-09-27T12:53:34Z | - |
| dc.date.available | 2007-09-27T12:53:34Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2005-08 | - |
| dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v.26, no.8, pp.527 - 529 | - |
| dc.identifier.issn | 0741-3106 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/1569 | - |
| dc.description.abstract | A quantum-well infrared phototransistor with a pseudomorphic high-electron mobility transistor (pHEMT) structure is presented. The proposed phototransistor uses four periods of a GaAs/Al0.3Ga0.7As (50 angstrom/120 angstrom) quantum-well absorption region, as well as an In0.15Ga0.85As quantum well conducting channel under the absorption layer. The phototransistor shows a large responsivity of 140 A/W around 6 mu m at 23 K (for a cutoff wavelength of 7.5 mu m). The relation between the photoconductive gain and the transconductance of the pHEMT structure is also investigated. | - |
| dc.description.sponsorship | This work was supported in part by KISTEP under the Nano-Structure Technology Projects and the donation support program of the IMT2000 R&D and in part by the MOE BK21 program. | en |
| dc.language | English | - |
| dc.language.iso | en_US | en |
| dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
| dc.subject | PHOTODETECTOR | - |
| dc.subject | DETECTIVITY | - |
| dc.subject | DOTS | - |
| dc.title | Quantum-well infrared phototransistor with pHEMT structure | - |
| dc.type | Article | - |
| dc.identifier.wosid | 000230802600003 | - |
| dc.identifier.scopusid | 2-s2.0-23844476064 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 26 | - |
| dc.citation.issue | 8 | - |
| dc.citation.beginningpage | 527 | - |
| dc.citation.endingpage | 529 | - |
| dc.citation.publicationname | IEEE ELECTRON DEVICE LETTERS | - |
| dc.identifier.doi | 10.1109/LED.2005.852539 | - |
| dc.contributor.localauthor | Hong, Songcheol | - |
| dc.contributor.nonIdAuthor | Oum, Joon Ho | - |
| dc.contributor.nonIdAuthor | Lee, Uk Hyun | - |
| dc.contributor.nonIdAuthor | Kang, Yong Hoon | - |
| dc.contributor.nonIdAuthor | Yang, Jong Ryul | - |
| dc.type.journalArticle | Article | - |
| dc.subject.keywordAuthor | infrared (IR) detectors | - |
| dc.subject.keywordAuthor | MODFETs | - |
| dc.subject.keywordAuthor | quantum-well (QW) devices | - |
| dc.subject.keywordAuthor | quantum-well infrared photodetectors (QWIPs) | - |
| dc.subject.keywordPlus | PHOTODETECTOR | - |
| dc.subject.keywordPlus | DETECTIVITY | - |
| dc.subject.keywordPlus | DOTS | - |
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