Stability of cubic GaN doped with 3d-transition metal ions
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Chang, Kee-Joo | - |
| dc.contributor.author | Choi, E.-A. | - |
| dc.date.accessioned | 2013-03-26T01:47:04Z | - |
| dc.date.available | 2013-03-26T01:47:04Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2007-06-19 | - |
| dc.identifier.citation | The 3rd Electronic Structure Calculation Workshop, v., no., pp. - | - |
| dc.identifier.uri | http://hdl.handle.net/10203/156898 | - |
| dc.language | ENG | - |
| dc.publisher | KIAS | - |
| dc.title | Stability of cubic GaN doped with 3d-transition metal ions | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | The 3rd Electronic Structure Calculation Workshop | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.contributor.localauthor | Chang, Kee-Joo | - |
| dc.contributor.nonIdAuthor | Choi, E.-A. | - |
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