A large-signal FET model including thermal and trap effects with pulsed I-V measurements
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Koh, K. | ko |
| dc.contributor.author | Park, H.-M. | ko |
| dc.contributor.author | Hong, Songcheol | ko |
| dc.date.accessioned | 2007-09-27T12:36:40Z | - |
| dc.date.available | 2007-09-27T12:36:40Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2003-06-08 | - |
| dc.identifier.citation | 2003 IEEE MTT-S International Microwave Symposium Digest, pp.467 - 470 | - |
| dc.identifier.issn | 0149-645X | - |
| dc.identifier.uri | http://hdl.handle.net/10203/1564 | - |
| dc.language | English | - |
| dc.language.iso | en_US | en |
| dc.publisher | IEEE | - |
| dc.title | A large-signal FET model including thermal and trap effects with pulsed I-V measurements | - |
| dc.type | Conference | - |
| dc.identifier.wosid | 000184045100107 | - |
| dc.identifier.scopusid | 2-s2.0-0042665452 | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 467 | - |
| dc.citation.endingpage | 470 | - |
| dc.citation.publicationname | 2003 IEEE MTT-S International Microwave Symposium Digest | - |
| dc.identifier.conferencecountry | US | - |
| dc.identifier.conferencelocation | Philadelphia, PA | - |
| dc.embargo.liftdate | 9999-12-31 | - |
| dc.embargo.terms | 9999-12-31 | - |
| dc.contributor.localauthor | Hong, Songcheol | - |
| dc.contributor.nonIdAuthor | Koh, K. | - |
| dc.contributor.nonIdAuthor | Park, H.-M. | - |
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