DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chang, Kee-Joo | - |
dc.contributor.author | Ryu, B. | - |
dc.date.accessioned | 2013-03-19T04:32:37Z | - |
dc.date.available | 2013-03-19T04:32:37Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2009-10 | - |
dc.identifier.citation | The 12th Asian workshop on First-principles Electronic Structure Calculations, v., no., pp. - | - |
dc.identifier.uri | http://hdl.handle.net/10203/155780 | - |
dc.language | ENG | - |
dc.title | The electronic structure of O-vacancy at the interface between ZnO and amorphous HfO2 | - |
dc.type | Conference | - |
dc.type.rims | CONF | - |
dc.citation.publicationname | The 12th Asian workshop on First-principles Electronic Structure Calculations | - |
dc.identifier.conferencecountry | China | - |
dc.identifier.conferencecountry | China | - |
dc.contributor.localauthor | Chang, Kee-Joo | - |
dc.contributor.nonIdAuthor | Ryu, B. | - |
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