High-K Dielectrics for Charge Trap - type Flash Memory Application
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Cho, Byung Jin | - |
| dc.contributor.author | He, W | - |
| dc.contributor.author | Pu, J | - |
| dc.date.accessioned | 2013-03-19T04:30:15Z | - |
| dc.date.available | 2013-03-19T04:30:15Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2008-07-09 | - |
| dc.identifier.citation | 2008 Asia-Pacific Workshop on Fundamentals and Applications on Advanced Semiconductor Devices, v., no., pp.37 - 41 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/155767 | - |
| dc.language | ENG | - |
| dc.title | High-K Dielectrics for Charge Trap - type Flash Memory Application | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 37 | - |
| dc.citation.endingpage | 41 | - |
| dc.citation.publicationname | 2008 Asia-Pacific Workshop on Fundamentals and Applications on Advanced Semiconductor Devices | - |
| dc.identifier.conferencecountry | Japan | - |
| dc.identifier.conferencecountry | Japan | - |
| dc.contributor.localauthor | Cho, Byung Jin | - |
| dc.contributor.nonIdAuthor | He, W | - |
| dc.contributor.nonIdAuthor | Pu, J | - |
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