ErxY2-xSiO5 nanocrystal and thin film for high gain per length material
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Suh, K. | - |
| dc.contributor.author | Go, H. | - |
| dc.contributor.author | Lee, S.-Y. | - |
| dc.contributor.author | Chang, J.S. | - |
| dc.contributor.author | Yang, M.-S. | - |
| dc.contributor.author | Shin, JungHoon | - |
| dc.date.accessioned | 2013-03-19T02:08:20Z | - |
| dc.date.available | 2013-03-19T02:08:20Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2008-01-21 | - |
| dc.identifier.citation | Optoelectronic Integrated Circuits X, v., no., pp. - | - |
| dc.identifier.uri | http://hdl.handle.net/10203/154780 | - |
| dc.language | ENG | - |
| dc.title | ErxY2-xSiO5 nanocrystal and thin film for high gain per length material | - |
| dc.type | Conference | - |
| dc.identifier.scopusid | 2-s2.0-42149088198 | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | Optoelectronic Integrated Circuits X | - |
| dc.identifier.conferencecountry | United States | - |
| dc.identifier.conferencecountry | United States | - |
| dc.contributor.localauthor | Shin, JungHoon | - |
| dc.contributor.nonIdAuthor | Suh, K. | - |
| dc.contributor.nonIdAuthor | Go, H. | - |
| dc.contributor.nonIdAuthor | Lee, S.-Y. | - |
| dc.contributor.nonIdAuthor | Chang, J.S. | - |
| dc.contributor.nonIdAuthor | Yang, M.-S. | - |
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