DC Field | Value | Language |
---|---|---|
dc.contributor.author | Cho, Byung Jin | - |
dc.contributor.author | Hwang, WS | - |
dc.contributor.author | Chan, DSH | - |
dc.date.accessioned | 2013-03-19T01:28:43Z | - |
dc.date.available | 2013-03-19T01:28:43Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2007-09-10 | - |
dc.identifier.citation | IEEE 4th International Symposium on Advanced Gate Stack Technology, v., no., pp.0 - 0 | - |
dc.identifier.uri | http://hdl.handle.net/10203/154481 | - |
dc.language | ENG | - |
dc.title | Metal Carbide Electrodes for Gate-First Metal Gate CMOS Process | - |
dc.type | Conference | - |
dc.type.rims | CONF | - |
dc.citation.beginningpage | 0 | - |
dc.citation.endingpage | 0 | - |
dc.citation.publicationname | IEEE 4th International Symposium on Advanced Gate Stack Technology | - |
dc.identifier.conferencecountry | United States | - |
dc.identifier.conferencecountry | United States | - |
dc.contributor.localauthor | Cho, Byung Jin | - |
dc.contributor.nonIdAuthor | Hwang, WS | - |
dc.contributor.nonIdAuthor | Chan, DSH | - |
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