An InGaAs PIN-diode based broadband traveling-wave switch with high- Isolation characteristics
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Yang J.G. | ko |
| dc.contributor.author | Kim M. | ko |
| dc.contributor.author | Yang, Kyounghoon | ko |
| dc.date.accessioned | 2013-03-18T23:51:14Z | - |
| dc.date.available | 2013-03-18T23:51:14Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2009-05-10 | - |
| dc.identifier.citation | IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009, pp.207 - 209 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/153743 | - |
| dc.language | English | - |
| dc.publisher | IEEE | - |
| dc.title | An InGaAs PIN-diode based broadband traveling-wave switch with high- Isolation characteristics | - |
| dc.type | Conference | - |
| dc.identifier.wosid | 000270539400055 | - |
| dc.identifier.scopusid | 2-s2.0-70349498299 | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 207 | - |
| dc.citation.endingpage | 209 | - |
| dc.citation.publicationname | IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009 | - |
| dc.identifier.conferencecountry | US | - |
| dc.identifier.conferencelocation | Newport Beach, CA | - |
| dc.contributor.localauthor | Yang, Kyounghoon | - |
| dc.contributor.nonIdAuthor | Yang J.G. | - |
| dc.contributor.nonIdAuthor | Kim M. | - |
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