A Study on the Growth Mode and Structural Characterization of GaSb Grown on Si (001) Substrate by Molecular Beam Epitaxy Method
- Issue Date
- 2006-04-20
- Language
- KOR
- Citation
Bulletin of The Korean Physics Society, Spring Meeting
- Appears in Collection
- MS-Conference Papers(학술회의논문)
- Files in This Item
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.