Dependence of Thin AlSb Buffer of GaSb/GaAs Epilayers Grown by Molecular Beam Epitaxy

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dc.contributor.authorLee, Jeong Yong-
dc.date.accessioned2013-03-18T19:08:50Z-
dc.date.available2013-03-18T19:08:50Z-
dc.date.created2012-02-06-
dc.date.issued2006-08-22-
dc.identifier.citationThe 13th International Symposium on the Physics of Semiconductors and Applications, v., no., pp. --
dc.identifier.urihttp://hdl.handle.net/10203/151521-
dc.languageENG-
dc.titleDependence of Thin AlSb Buffer of GaSb/GaAs Epilayers Grown by Molecular Beam Epitaxy-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.publicationnameThe 13th International Symposium on the Physics of Semiconductors and Applications-
dc.identifier.conferencecountrySouth Korea-
dc.identifier.conferencecountrySouth Korea-
dc.contributor.localauthorLee, Jeong Yong-
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MS-Conference Papers(학술회의논문)
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