새로운 Inner Field-plate 구조를 이용한 고전력 AlGaN/GaN HEMTs의 향상된 DC와 RF 성능
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 이기원 | - |
| dc.contributor.author | 고광의 | - |
| dc.contributor.author | 이성식 | - |
| dc.contributor.author | 양경훈 | - |
| dc.date.accessioned | 2013-03-18T18:32:38Z | - |
| dc.date.available | 2013-03-18T18:32:38Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2006 | - |
| dc.identifier.citation | 2006, Fall Conference, Korea Institute of Military Science & Technology, v., no., pp.155 - 157 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/151234 | - |
| dc.language | KOR | - |
| dc.title | 새로운 Inner Field-plate 구조를 이용한 고전력 AlGaN/GaN HEMTs의 향상된 DC와 RF 성능 | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 155 | - |
| dc.citation.endingpage | 157 | - |
| dc.citation.publicationname | 2006, Fall Conference, Korea Institute of Military Science & Technology | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.contributor.localauthor | 양경훈 | - |
| dc.contributor.nonIdAuthor | 이기원 | - |
| dc.contributor.nonIdAuthor | 고광의 | - |
| dc.contributor.nonIdAuthor | 이성식 | - |
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