The enhancement of Q factor in RPCVD SiGe varactors by the structural modification of the base-collector junction
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Mheen, B | ko |
| dc.contributor.author | Suh, D | ko |
| dc.contributor.author | Kim, SH | ko |
| dc.contributor.author | Shim, KH | ko |
| dc.contributor.author | Kang, JY | ko |
| dc.contributor.author | Hong, Songcheol | ko |
| dc.date.accessioned | 2007-09-19T14:47:07Z | - |
| dc.date.available | 2007-09-19T14:47:07Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2003-04 | - |
| dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v.24, no.4, pp.239 - 241 | - |
| dc.identifier.issn | 0741-3106 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/1505 | - |
| dc.description.abstract | We designed two silicon germanium (SiGe) varactors enhanced in Q factor through a structural, modification by using a cost-effective SiGe heterostructure bipolar transistor (HBT) process, a conventional reduced-pressure chemical vapor deposition (RPCVD). As a result, the suggested structures showed a superiority in Q factor (160/GHz/pF at 2.5 GHz) to the conventional one (70/GHz/pF), even with neither a change in process nor an additional mask. We attributed the enhancement of Q factor to the structural feature of the varactors and quantitatively analyzed it with a lumped element model. | - |
| dc.language | English | - |
| dc.language.iso | en_US | en |
| dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
| dc.subject | TECHNOLOGY | - |
| dc.title | The enhancement of Q factor in RPCVD SiGe varactors by the structural modification of the base-collector junction | - |
| dc.type | Article | - |
| dc.identifier.wosid | 000183670900012 | - |
| dc.identifier.scopusid | 2-s2.0-0038104349 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 24 | - |
| dc.citation.issue | 4 | - |
| dc.citation.beginningpage | 239 | - |
| dc.citation.endingpage | 241 | - |
| dc.citation.publicationname | IEEE ELECTRON DEVICE LETTERS | - |
| dc.embargo.liftdate | 9999-12-31 | - |
| dc.embargo.terms | 9999-12-31 | - |
| dc.contributor.localauthor | Hong, Songcheol | - |
| dc.contributor.nonIdAuthor | Mheen, B | - |
| dc.contributor.nonIdAuthor | Suh, D | - |
| dc.contributor.nonIdAuthor | Kim, SH | - |
| dc.contributor.nonIdAuthor | Shim, KH | - |
| dc.contributor.nonIdAuthor | Kang, JY | - |
| dc.type.journalArticle | Article | - |
| dc.subject.keywordAuthor | quality (Q) factor | - |
| dc.subject.keywordAuthor | RPCVD | - |
| dc.subject.keywordAuthor | SiGeHBT | - |
| dc.subject.keywordAuthor | SiGe varactor | - |
| dc.subject.keywordPlus | TECHNOLOGY | - |
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