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Reliability of BCB Passivated InAlAs/InGaAs HEMTs Under Thermal Stress

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dc.contributor.authorKim, D-
dc.contributor.authorYoon, M-
dc.contributor.authorKim, T-
dc.contributor.authorYang, Kyounghoon-
dc.date.accessioned2013-03-18T16:30:03Z-
dc.date.available2013-03-18T16:30:03Z-
dc.date.created2012-02-06-
dc.date.issued2003-
dc.identifier.citationIEEE, International Symposium on Compound Semiconductors, v., no., pp.231 - 232-
dc.identifier.urihttp://hdl.handle.net/10203/150226-
dc.languageENG-
dc.publisherIEEE-
dc.titleReliability of BCB Passivated InAlAs/InGaAs HEMTs Under Thermal Stress-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage231-
dc.citation.endingpage232-
dc.citation.publicationnameIEEE, International Symposium on Compound Semiconductors-
dc.identifier.conferencecountryUnited States-
dc.identifier.conferencecountryUnited States-
dc.contributor.localauthorYang, Kyounghoon-
dc.contributor.nonIdAuthorKim, D-
dc.contributor.nonIdAuthorYoon, M-
dc.contributor.nonIdAuthorKim, T-
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EE-Conference Papers(학술회의논문)
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