Fabrication of GaAs-based Heterosturcture-MOS RF Switch Devices Using an LPCEO Technology
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, S | - |
| dc.contributor.author | 양경훈 | - |
| dc.date.accessioned | 2013-03-18T12:15:58Z | - |
| dc.date.available | 2013-03-18T12:15:58Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2006 | - |
| dc.identifier.citation | Korean Conference on Semiconductors, v., no., pp.469 - 470 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/148291 | - |
| dc.language | ENG | - |
| dc.title | Fabrication of GaAs-based Heterosturcture-MOS RF Switch Devices Using an LPCEO Technology | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 469 | - |
| dc.citation.endingpage | 470 | - |
| dc.citation.publicationname | Korean Conference on Semiconductors | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.contributor.localauthor | 양경훈 | - |
| dc.contributor.nonIdAuthor | Kim, S | - |
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