DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, MY | ko |
dc.contributor.author | Kim, YH | ko |
dc.contributor.author | Kim, GH | ko |
dc.contributor.author | Yang, SC | ko |
dc.contributor.author | Lee, YS | ko |
dc.contributor.author | Lee, Hee Chul | ko |
dc.date.accessioned | 2009-12-14T02:07:34Z | - |
dc.date.available | 2009-12-14T02:07:34Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2006-01 | - |
dc.identifier.citation | SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.21, pp.40 - 43 | - |
dc.identifier.issn | 0268-1242 | - |
dc.identifier.uri | http://hdl.handle.net/10203/14752 | - |
dc.description.abstract | Excellent surface flatness of HgCdTe wafers is essential for fabricating large infrared focal plane arrays (IRFPAs) within the framework of a flip-chip bonding yield. However, liquid-phase epitaxy (LPE) HgCdTe wafers, which are widely used for IRFPAs, have inherent problems pertaining to surface flatness. In this study, we introduced a single-point diamond turning (SPDT) method for use in fabricating LPE HgCdTe photodiodes. The cutoff wavelength of the wafers is similar to 5 mu m. The surface roughness of the LPE HgCdTe wafer has been substantially reduced but a type-converted defective layer was formed on the surface of the HgCdTe wafer after SPDT, which was confirmed using Hall and capacitance-voltage (C-V) measurements. The defective layer, however, was easily removed by bromine in methanol (Br-MeOH) etching. The fabricated photodiode showed a dynamic resistance-area product at the zero bias (R(0)A) value of similar to 1 x 10(4) Omega cm(2) for a junction area of 30 x 30 mu m(2) at 80 K, which is equivalent to that of a conventional photodiode. The flip-chip bonding efficiency has been remarkably improved from 89.43% to 99.99% for 320 x 256 IRFPA at room temperature after SPDT. | - |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | TE-SOLUTION | - |
dc.subject | SLIDER | - |
dc.title | A new surface-flattening method using single-point diamond turning (SPDT) and its effects on LPE HgCdTe photodiodes | - |
dc.type | Article | - |
dc.identifier.wosid | 000235069800008 | - |
dc.identifier.scopusid | 2-s2.0-29144495949 | - |
dc.type.rims | ART | - |
dc.citation.volume | 21 | - |
dc.citation.beginningpage | 40 | - |
dc.citation.endingpage | 43 | - |
dc.citation.publicationname | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | - |
dc.identifier.doi | 10.1088/0268-1242/21/1/007 | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Lee, Hee Chul | - |
dc.contributor.nonIdAuthor | Lee, MY | - |
dc.contributor.nonIdAuthor | Kim, YH | - |
dc.contributor.nonIdAuthor | Kim, GH | - |
dc.contributor.nonIdAuthor | Yang, SC | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | TE-SOLUTION | - |
dc.subject.keywordPlus | SLIDER | - |
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