DC Field | Value | Language |
---|---|---|
dc.contributor.author | No, Kwangsoo | - |
dc.contributor.author | Kim, Yong-Seong | - |
dc.contributor.author | Jung, Soon-Won | - |
dc.contributor.author | Ban, Yong-Jun | - |
dc.contributor.author | Jeong, Sang-Hyun | - |
dc.contributor.author | Kim, Wan-Seop | - |
dc.contributor.author | Kim, Young-Kil | - |
dc.date.accessioned | 2013-03-18T10:12:24Z | - |
dc.date.available | 2013-03-18T10:12:24Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2004-08-19 | - |
dc.identifier.citation | 5th Korea-Japan Conference on Ferroelectricity, v., no., pp.0 - 0 | - |
dc.identifier.uri | http://hdl.handle.net/10203/147312 | - |
dc.language | ENG | - |
dc.title | Properties of single transistor type ferroelectric-gated FET’s for nonvolatile memory applications | - |
dc.type | Conference | - |
dc.type.rims | CONF | - |
dc.citation.beginningpage | 0 | - |
dc.citation.endingpage | 0 | - |
dc.citation.publicationname | 5th Korea-Japan Conference on Ferroelectricity | - |
dc.identifier.conferencecountry | South Korea | - |
dc.identifier.conferencecountry | South Korea | - |
dc.contributor.localauthor | No, Kwangsoo | - |
dc.contributor.nonIdAuthor | Kim, Yong-Seong | - |
dc.contributor.nonIdAuthor | Jung, Soon-Won | - |
dc.contributor.nonIdAuthor | Ban, Yong-Jun | - |
dc.contributor.nonIdAuthor | Jeong, Sang-Hyun | - |
dc.contributor.nonIdAuthor | Kim, Wan-Seop | - |
dc.contributor.nonIdAuthor | Kim, Young-Kil | - |
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