Structural characterization of GaN samples in a LED structure with various Mg doping level
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, Jeong Yong | - |
| dc.date.accessioned | 2013-03-18T09:39:27Z | - |
| dc.date.available | 2013-03-18T09:39:27Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2005-02-01 | - |
| dc.identifier.citation | The 12th Korean Conference on Semiconductors, v., no., pp.313 - 314 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/147073 | - |
| dc.language | KOR | - |
| dc.title | Structural characterization of GaN samples in a LED structure with various Mg doping level | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 313 | - |
| dc.citation.endingpage | 314 | - |
| dc.citation.publicationname | The 12th Korean Conference on Semiconductors | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.contributor.localauthor | Lee, Jeong Yong | - |
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