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College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Conference Papers(학술회의논문)

Electrical and physical properties of Si1-xGex/HfO2/Si MOS-capacitorsElectrical and physical properties of Si1-xGex/HfO2/Si MOS-capacitors

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dc.contributor.authorCho, Byung Jin-
dc.contributor.authorWu, N-
dc.contributor.authorZhu, C-
dc.contributor.authorBalasubramanian, N-
dc.contributor.authorYeo, CC-
dc.contributor.authorJoo, MS-
dc.contributor.authorYu, HY-
dc.date.accessioned2013-03-18T09:06:14Z-
dc.date.available2013-03-18T09:06:14Z-
dc.date.created2012-02-06-
dc.date.issued2003-12-11-
dc.identifier.citation2nd International Conference on Materials for Advanced Technologies, v., no., pp.535 - 535-
dc.identifier.urihttp://hdl.handle.net/10203/146824-
dc.languageENG-
dc.titleElectrical and physical properties of Si1-xGex/HfO2/Si MOS-capacitors-
dc.title.alternativeElectrical and physical properties of Si1-xGex/HfO2/Si MOS-capacitors-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage535-
dc.citation.endingpage535-
dc.citation.publicationname2nd International Conference on Materials for Advanced Technologies-
dc.identifier.conferencecountrySingapore-
dc.identifier.conferencecountrySingapore-
dc.contributor.localauthorCho, Byung Jin-
dc.contributor.nonIdAuthorWu, N-
dc.contributor.nonIdAuthorZhu, C-
dc.contributor.nonIdAuthorBalasubramanian, N-
dc.contributor.nonIdAuthorYeo, CC-
dc.contributor.nonIdAuthorJoo, MS-
dc.contributor.nonIdAuthorYu, HY-
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EE-Conference Papers(학술회의논문)
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