DC Field | Value | Language |
---|---|---|
dc.contributor.author | Cho, Byung Jin | - |
dc.contributor.author | Hu, H | - |
dc.contributor.author | Ding, SJ | - |
dc.contributor.author | Lim, HF | - |
dc.contributor.author | Zhu, C | - |
dc.contributor.author | Li, MF | - |
dc.contributor.author | Kim, SJ | - |
dc.date.accessioned | 2013-03-18T08:48:46Z | - |
dc.date.available | 2013-03-18T08:48:46Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2003-12-08 | - |
dc.identifier.citation | International Electron Device Meeting (IEDM), v., no., pp.0 - 0 | - |
dc.identifier.uri | http://hdl.handle.net/10203/146666 | - |
dc.language | ENG | - |
dc.title | High-performance ALD HfO2-Al2O3 laminate MIM capacitors for RF and mixed signal IC applications | - |
dc.title.alternative | High-performance ALD HfO2-Al2O3 laminate MIM capacitors for RF and mixed signal IC applications | - |
dc.type | Conference | - |
dc.type.rims | CONF | - |
dc.citation.beginningpage | 0 | - |
dc.citation.endingpage | 0 | - |
dc.citation.publicationname | International Electron Device Meeting (IEDM) | - |
dc.identifier.conferencecountry | United States | - |
dc.identifier.conferencecountry | United States | - |
dc.contributor.localauthor | Cho, Byung Jin | - |
dc.contributor.nonIdAuthor | Hu, H | - |
dc.contributor.nonIdAuthor | Ding, SJ | - |
dc.contributor.nonIdAuthor | Lim, HF | - |
dc.contributor.nonIdAuthor | Zhu, C | - |
dc.contributor.nonIdAuthor | Li, MF | - |
dc.contributor.nonIdAuthor | Kim, SJ | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.