A novel approach for integration of dual metal gate process using ultra thin aluminum nitride buffer layerA novel approach for integration of dual metal gate process using ultra thin aluminum nitride buffer layer
- Issue Date
- 2003-06-10
- Language
- ENG
- Citation
Symposium on VLSI Technology, pp.149 - 149
- Appears in Collection
- EE-Conference Papers(학술회의논문)
- Files in This Item
- There are no files associated with this item.
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