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MOCVD HfAlxOy gate dielectrics deposited using single cocktail liquid sourceMOCVD HfAlxOy gate dielectrics deposited using single cocktail liquid source

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dc.contributor.authorCho, Byung Jin-
dc.contributor.authorJoo, MS-
dc.contributor.authorYeo, CC-
dc.contributor.authorWhoang, SJ-
dc.contributor.authorMatthew, S-
dc.contributor.authorBera, LK-
dc.contributor.authorBalasubramanian, N-
dc.date.accessioned2013-03-18T08:12:24Z-
dc.date.available2013-03-18T08:12:24Z-
dc.date.created2012-02-06-
dc.date.issued2003-09-19-
dc.identifier.citation2003 International Conf. on Solid State Devices and Materials (SSDM), v., no., pp.0 - 0-
dc.identifier.urihttp://hdl.handle.net/10203/146369-
dc.languageENG-
dc.titleMOCVD HfAlxOy gate dielectrics deposited using single cocktail liquid source-
dc.title.alternativeMOCVD HfAlxOy gate dielectrics deposited using single cocktail liquid source-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage0-
dc.citation.endingpage0-
dc.citation.publicationname2003 International Conf. on Solid State Devices and Materials (SSDM)-
dc.identifier.conferencecountryJapan-
dc.identifier.conferencecountryJapan-
dc.contributor.localauthorCho, Byung Jin-
dc.contributor.nonIdAuthorJoo, MS-
dc.contributor.nonIdAuthorYeo, CC-
dc.contributor.nonIdAuthorWhoang, SJ-
dc.contributor.nonIdAuthorMatthew, S-
dc.contributor.nonIdAuthorBera, LK-
dc.contributor.nonIdAuthorBalasubramanian, N-
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EE-Conference Papers(학술회의논문)
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