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College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Conference Papers(학술회의논문)

Investigation of PVD HfO2 MIM capacitors for Si RF and Mixed signal ICs applicationInvestigation of PVD HfO2 MIM capacitors for Si RF and Mixed signal ICs application

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dc.contributor.authorCho, Byung Jin-
dc.contributor.authorHang, H-
dc.contributor.authorDing, SJ-
dc.contributor.authorZhu, C-
dc.contributor.authorRustagi, RC-
dc.contributor.authorLu, YF-
dc.contributor.authorLi, MF-
dc.date.accessioned2013-03-18T08:11:49Z-
dc.date.available2013-03-18T08:11:49Z-
dc.date.created2012-02-06-
dc.date.issued2003-12-10-
dc.identifier.citationInternational semiconductor device research symposium, v., no., pp.0 - 0-
dc.identifier.urihttp://hdl.handle.net/10203/146366-
dc.languageENG-
dc.titleInvestigation of PVD HfO2 MIM capacitors for Si RF and Mixed signal ICs application-
dc.title.alternativeInvestigation of PVD HfO2 MIM capacitors for Si RF and Mixed signal ICs application-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage0-
dc.citation.endingpage0-
dc.citation.publicationnameInternational semiconductor device research symposium-
dc.identifier.conferencecountryUnited States-
dc.identifier.conferencecountryUnited States-
dc.contributor.localauthorCho, Byung Jin-
dc.contributor.nonIdAuthorHang, H-
dc.contributor.nonIdAuthorDing, SJ-
dc.contributor.nonIdAuthorZhu, C-
dc.contributor.nonIdAuthorRustagi, RC-
dc.contributor.nonIdAuthorLu, YF-
dc.contributor.nonIdAuthorLi, MF-
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EE-Conference Papers(학술회의논문)
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