A Comprehensive Study of Punchthrough Characteristics in Multiple-Gate MOSFETs
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Choi, Yang-Kyu | - |
| dc.contributor.author | Kang, Hyun-Sik | - |
| dc.contributor.author | Ryu, Seong-Wan | - |
| dc.date.accessioned | 2013-03-18T07:41:48Z | - |
| dc.date.available | 2013-03-18T07:41:48Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2005-06 | - |
| dc.identifier.citation | IEEE Electron Device Society, v., no., pp.63 - 66 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/146123 | - |
| dc.language | ENG | - |
| dc.title | A Comprehensive Study of Punchthrough Characteristics in Multiple-Gate MOSFETs | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 63 | - |
| dc.citation.endingpage | 66 | - |
| dc.citation.publicationname | IEEE Electron Device Society | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.identifier.conferencecountry | South Korea | - |
| dc.contributor.localauthor | Choi, Yang-Kyu | - |
| dc.contributor.nonIdAuthor | Kang, Hyun-Sik | - |
| dc.contributor.nonIdAuthor | Ryu, Seong-Wan | - |
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