Plasma-enhanced atomic layer deposition of HfO2 thin films using oxygen plasma
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Park, P.K. | - |
| dc.contributor.author | Kang, Sungwon | - |
| dc.date.accessioned | 2013-03-18T07:30:30Z | - |
| dc.date.available | 2013-03-18T07:30:30Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2005-10-16 | - |
| dc.identifier.citation | 208th Meeting of The Electrochemical Society, v., no., pp.915 - | - |
| dc.identifier.issn | 1091-8213 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/146045 | - |
| dc.language | ENG | - |
| dc.title | Plasma-enhanced atomic layer deposition of HfO2 thin films using oxygen plasma | - |
| dc.type | Conference | - |
| dc.identifier.scopusid | 2-s2.0-33645700964 | - |
| dc.type.rims | CONF | - |
| dc.citation.beginningpage | 915 | - |
| dc.citation.publicationname | 208th Meeting of The Electrochemical Society | - |
| dc.identifier.conferencecountry | United States | - |
| dc.identifier.conferencecountry | United States | - |
| dc.contributor.localauthor | Kang, Sungwon | - |
| dc.contributor.nonIdAuthor | Park, P.K. | - |
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