DC Field | Value | Language |
---|---|---|
dc.contributor.author | Cho, Byung Jin | - |
dc.contributor.author | Kim, SJ | - |
dc.contributor.author | Yu, MB | - |
dc.contributor.author | Li, MF | - |
dc.contributor.author | Xiong, YZ | - |
dc.contributor.author | Zhu, C | - |
dc.contributor.author | Chin, A | - |
dc.date.accessioned | 2013-03-18T06:09:28Z | - |
dc.date.available | 2013-03-18T06:09:28Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2005-06-14 | - |
dc.identifier.citation | Symposium on VLSI Technology, v., no., pp.56 - 57 | - |
dc.identifier.uri | http://hdl.handle.net/10203/145443 | - |
dc.language | ENG | - |
dc.title | High Capacitance Density (>17fF/um2) Nb2O5-based MIM capacitors for Future RF IC Application | - |
dc.title.alternative | High Capacitance Density (>17fF/um2) Nb2O5-based MIM capacitors for Future RF IC Application | - |
dc.type | Conference | - |
dc.type.rims | CONF | - |
dc.citation.beginningpage | 56 | - |
dc.citation.endingpage | 57 | - |
dc.citation.publicationname | Symposium on VLSI Technology | - |
dc.identifier.conferencecountry | Japan | - |
dc.identifier.conferencecountry | Japan | - |
dc.contributor.localauthor | Cho, Byung Jin | - |
dc.contributor.nonIdAuthor | Kim, SJ | - |
dc.contributor.nonIdAuthor | Yu, MB | - |
dc.contributor.nonIdAuthor | Li, MF | - |
dc.contributor.nonIdAuthor | Xiong, YZ | - |
dc.contributor.nonIdAuthor | Zhu, C | - |
dc.contributor.nonIdAuthor | Chin, A | - |
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