DC Field | Value | Language |
---|---|---|
dc.contributor.author | Cho, Byung Jin | - |
dc.contributor.author | Yeo, CC | - |
dc.contributor.author | Lee, MH | - |
dc.contributor.author | Liu, CW | - |
dc.contributor.author | Choi, KJ | - |
dc.contributor.author | Lee, TW | - |
dc.date.accessioned | 2013-03-18T06:09:08Z | - |
dc.date.available | 2013-03-18T06:09:08Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2005-12-08 | - |
dc.identifier.citation | Proceedings on 2005 IEEE Conference on Electron Devices and Solid-State Circuits, v., no., pp.107 - 110 | - |
dc.identifier.uri | http://hdl.handle.net/10203/145441 | - |
dc.language | ENG | - |
dc.title | Metal gate/high-K dielectric stack on Si cap/ultra-thin pure Ge epi/Si substrate | - |
dc.title.alternative | Metal gate/high-K dielectric stack on Si cap/ultra-thin pure Ge epi/Si substrate | - |
dc.type | Conference | - |
dc.type.rims | CONF | - |
dc.citation.beginningpage | 107 | - |
dc.citation.endingpage | 110 | - |
dc.citation.publicationname | Proceedings on 2005 IEEE Conference on Electron Devices and Solid-State Circuits | - |
dc.identifier.conferencecountry | Hong Kong | - |
dc.identifier.conferencecountry | Hong Kong | - |
dc.contributor.localauthor | Cho, Byung Jin | - |
dc.contributor.nonIdAuthor | Yeo, CC | - |
dc.contributor.nonIdAuthor | Lee, MH | - |
dc.contributor.nonIdAuthor | Liu, CW | - |
dc.contributor.nonIdAuthor | Choi, KJ | - |
dc.contributor.nonIdAuthor | Lee, TW | - |
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