DSpace at KOASAS: Analysis of charge trapping and breakdown mechanism in high-K dielectrics with metal gate electrode using carrier separation

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College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Conference Papers(학술회의논문)

Analysis of charge trapping and breakdown mechanism in high-K dielectrics with metal gate electrode using carrier separationAnalysis of charge trapping and breakdown mechanism in high-K dielectrics with metal gate electrode using carrier separation

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Cho, Byung Jin researcher / Loh, WY / Joo, MS / Li, MF / Chan, DSH / Kwong, DL

Issue Date: 2003-12-08

Language: ENG

Citation: International Electron Device Meeting (IEDM), pp.0 - 0

URI: http://hdl.handle.net/10203/145132

Appears in Collection: EE-Conference Papers(학술회의논문)

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Analysis of charge trapping and breakdown mechanism in high-K dielectrics with metal gate electrode using carrier separationAnalysis of charge trapping and breakdown mechanism in high-K dielectrics with metal gate electrode using carrier separation

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