DC Field | Value | Language |
---|---|---|
dc.contributor.author | No, Kwangsoo | - |
dc.contributor.author | Kim, Min Jeong | - |
dc.contributor.author | Kim, Yang-Soo | - |
dc.contributor.author | Kim, Sung Kwan | - |
dc.contributor.author | Jeon, Young-Ah | - |
dc.contributor.author | Lee, Jin Ho | - |
dc.contributor.author | Chung, Won Il | - |
dc.date.accessioned | 2013-03-18T05:08:15Z | - |
dc.date.available | 2013-03-18T05:08:15Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2005-08-04 | - |
dc.identifier.citation | The 18th DV-Xα meeting , v., no., pp.0 - 0 | - |
dc.identifier.uri | http://hdl.handle.net/10203/145002 | - |
dc.language | ENG | - |
dc.publisher | The 18th DV-Xα meeting | - |
dc.title | Electronic structures of doped In2O3 and ZnO by IVB elements (Si, Ge, Sn, and Pb) calculated by DV-Xα | - |
dc.type | Conference | - |
dc.type.rims | CONF | - |
dc.citation.beginningpage | 0 | - |
dc.citation.endingpage | 0 | - |
dc.citation.publicationname | The 18th DV-Xα meeting | - |
dc.identifier.conferencecountry | Japan | - |
dc.identifier.conferencecountry | Japan | - |
dc.contributor.localauthor | No, Kwangsoo | - |
dc.contributor.nonIdAuthor | Kim, Min Jeong | - |
dc.contributor.nonIdAuthor | Kim, Yang-Soo | - |
dc.contributor.nonIdAuthor | Kim, Sung Kwan | - |
dc.contributor.nonIdAuthor | Jeon, Young-Ah | - |
dc.contributor.nonIdAuthor | Lee, Jin Ho | - |
dc.contributor.nonIdAuthor | Chung, Won Il | - |
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