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College of Engineering(공과대학)Dept. of Materials Science and Engineering(신소재공학과)MS-Conference Papers(학술회의논문)

Electronic structures of doped In2O3 and ZnO by IVB elements (Si, Ge, Sn, and Pb) calculated by DV-Xα

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dc.contributor.authorNo, Kwangsoo-
dc.contributor.authorKim, Min Jeong-
dc.contributor.authorKim, Yang-Soo-
dc.contributor.authorKim, Sung Kwan-
dc.contributor.authorJeon, Young-Ah-
dc.contributor.authorLee, Jin Ho-
dc.contributor.authorChung, Won Il-
dc.date.accessioned2013-03-18T05:08:15Z-
dc.date.available2013-03-18T05:08:15Z-
dc.date.created2012-02-06-
dc.date.issued2005-08-04-
dc.identifier.citationThe 18th DV-Xα meeting , v., no., pp.0 - 0-
dc.identifier.urihttp://hdl.handle.net/10203/145002-
dc.languageENG-
dc.publisherThe 18th DV-Xα meeting-
dc.titleElectronic structures of doped In2O3 and ZnO by IVB elements (Si, Ge, Sn, and Pb) calculated by DV-Xα-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage0-
dc.citation.endingpage0-
dc.citation.publicationnameThe 18th DV-Xα meeting-
dc.identifier.conferencecountryJapan-
dc.identifier.conferencecountryJapan-
dc.contributor.localauthorNo, Kwangsoo-
dc.contributor.nonIdAuthorKim, Min Jeong-
dc.contributor.nonIdAuthorKim, Yang-Soo-
dc.contributor.nonIdAuthorKim, Sung Kwan-
dc.contributor.nonIdAuthorJeon, Young-Ah-
dc.contributor.nonIdAuthorLee, Jin Ho-
dc.contributor.nonIdAuthorChung, Won Il-
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MS-Conference Papers(학술회의논문)
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