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College of Engineering(공과대학)School of Electrical Engineering(전기및전자공학부)EE-Conference Papers(학술회의논문)

Physical and electrical properties of MOCVD HfAlxOy gate dielectric and their composition ratio dependencePhysical and electrical properties of MOCVD HfAlxOy gate dielectric and their composition ratio dependence

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dc.contributor.authorCho, Byung Jin-
dc.contributor.authorJoo, MS-
dc.contributor.authorYeo, CC-
dc.contributor.authorChing, YL-
dc.contributor.authorLoh, WY-
dc.contributor.authorWhoang, SJ-
dc.contributor.authorMathew, S-
dc.date.accessioned2013-03-18T04:31:45Z-
dc.date.available2013-03-18T04:31:45Z-
dc.date.created2012-02-06-
dc.date.issued2003-12-11-
dc.identifier.citationInternational Conference on Materials for Advanced Technologies, v., no., pp.517 - 517-
dc.identifier.urihttp://hdl.handle.net/10203/144760-
dc.languageENG-
dc.titlePhysical and electrical properties of MOCVD HfAlxOy gate dielectric and their composition ratio dependence-
dc.title.alternativePhysical and electrical properties of MOCVD HfAlxOy gate dielectric and their composition ratio dependence-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage517-
dc.citation.endingpage517-
dc.citation.publicationnameInternational Conference on Materials for Advanced Technologies-
dc.identifier.conferencecountrySingapore-
dc.identifier.conferencecountrySingapore-
dc.contributor.localauthorCho, Byung Jin-
dc.contributor.nonIdAuthorJoo, MS-
dc.contributor.nonIdAuthorYeo, CC-
dc.contributor.nonIdAuthorChing, YL-
dc.contributor.nonIdAuthorLoh, WY-
dc.contributor.nonIdAuthorWhoang, SJ-
dc.contributor.nonIdAuthorMathew, S-
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EE-Conference Papers(학술회의논문)
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