RPCVD silicon nitride passivation of InGaAsP with temperature ramping during deposition

Cited 0 time in webofscience Cited 0 time in scopus
  • Hit : 428
  • Download : 0
Issue Date
2005-05-16
Language
ENG
Citation

207th ECS Meeting, pp.361 - 366

URI
http://hdl.handle.net/10203/144624
Appears in Collection
EE-Conference Papers(학술회의논문)
Files in This Item
There are no files associated with this item.

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0