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Investigation of the source-side injection characteristic of a dopant-segregated Schottky barrier metal-oxide-semiconductor field-effect-transistor

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dc.contributor.authorKim, Sung-Hoko
dc.contributor.authorChoi, Sung-Jinko
dc.contributor.authorJang, Moon-Gyuko
dc.contributor.authorChoi, Yang-Kyuko
dc.date.accessioned2009-12-09T05:37:44Z-
dc.date.available2009-12-09T05:37:44Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2009-08-
dc.identifier.citationAPPLIED PHYSICS LETTERS, v.95, no.6-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10203/14439-
dc.description.abstractA unique characteristic of hot electron injection from the source side in a dopant-segregated Schottky barrier (DSSB) metal-oxide-semiconductor field-effect-transistor is investigated. A hot electron injection triggered by the sharp energy band bending near the source-side Schottky barrier is verified by the charge pumping method with numerical device simulations. With the aid of the charge pumping method, the lateral distribution of interface traps generated by injected hot electrons is analyzed. The results provide a guideline for the optimization of programming and erase operations in DSSB devices.-
dc.description.sponsorshipa grant Grant No. 08K1401-00210 from the Center for Nanoscale Mechatronics and Manufacturing, one of the 21st Century Frontier Research Programs supported by the Korea Ministry of Education, Science and Technology MESTen
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherAMER INST PHYSICS-
dc.subjectDSSB FINFET SONOS-
dc.subjectINTERFACE TRAPS-
dc.subjectFLASH MEMORY-
dc.subjectLATERAL DISTRIBUTION-
dc.subjectCHARGE-
dc.subjectENHANCEMENT-
dc.subjectMOSFETS-
dc.titleInvestigation of the source-side injection characteristic of a dopant-segregated Schottky barrier metal-oxide-semiconductor field-effect-transistor-
dc.typeArticle-
dc.identifier.wosid000269060600076-
dc.identifier.scopusid2-s2.0-69049098973-
dc.type.rimsART-
dc.citation.volume95-
dc.citation.issue6-
dc.citation.publicationnameAPPLIED PHYSICS LETTERS-
dc.identifier.doi10.1063/1.3200245-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorChoi, Yang-Kyu-
dc.contributor.nonIdAuthorJang, Moon-Gyu-
dc.type.journalArticleArticle-
dc.subject.keywordAuthordoping profiles-
dc.subject.keywordAuthorhot carriers-
dc.subject.keywordAuthorinterface states-
dc.subject.keywordAuthorMOSFET-
dc.subject.keywordAuthorSchottky barriers-
dc.subject.keywordAuthorsegregation-
dc.subject.keywordPlusDSSB FINFET SONOS-
dc.subject.keywordPlusINTERFACE TRAPS-
dc.subject.keywordPlusFLASH MEMORY-
dc.subject.keywordPlusLATERAL DISTRIBUTION-
dc.subject.keywordPlusCHARGE-
dc.subject.keywordPlusENHANCEMENT-
dc.subject.keywordPlusMOSFETS-
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