Plasma-Enhanced Atomic Layer Depposition of HfO2 Thin Films Using Oxygen Plasma
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Sang-Won Kang | - |
| dc.date.accessioned | 2013-03-18T03:17:17Z | - |
| dc.date.available | 2013-03-18T03:17:17Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2005 | - |
| dc.identifier.citation | 208th Meeting of The Electrochemical Society, v., no., pp. - | - |
| dc.identifier.uri | http://hdl.handle.net/10203/144246 | - |
| dc.language | ENG | - |
| dc.title | Plasma-Enhanced Atomic Layer Depposition of HfO2 Thin Films Using Oxygen Plasma | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | 208th Meeting of The Electrochemical Society | - |
| dc.identifier.conferencecountry | United States | - |
| dc.identifier.conferencecountry | United States | - |
| dc.contributor.localauthor | Sang-Won Kang | - |
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